Paper Title:
SF6/02 and CF4/02 Reactive-Ion-Etching-Induced Defects in Silicon Studied by Photoluminescence Spectroscopy: Role of Oxygen
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 196-201)
Edited by
M. Suezawa and H. Katayama-Yoshida
Pages
1807-1812
DOI
10.4028/www.scientific.net/MSF.196-201.1807
Citation
I.A. Buyanova, A. Henry, B. Monemar, J. L. Lindström, M. K. Sheinkman, G.S. Oehrlein, "SF6/02 and CF4/02 Reactive-Ion-Etching-Induced Defects in Silicon Studied by Photoluminescence Spectroscopy: Role of Oxygen", Materials Science Forum, Vols. 196-201, pp. 1807-1812, 1995
Online since
November 1995
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Price
$32.00
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