Paper Title:
Evaluation Method of Precipitated Oxygen Concentration in Low Resistivity Silicon Wafers Using X-Ray Diffration
  Abstract

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Periodical
Materials Science Forum (Volumes 196-201)
Edited by
M. Suezawa and H. Katayama-Yoshida
Pages
1865-1870
DOI
10.4028/www.scientific.net/MSF.196-201.1865
Citation
H. Takeno, M. Mizuno, S. Ushio, T. Takenaka, "Evaluation Method of Precipitated Oxygen Concentration in Low Resistivity Silicon Wafers Using X-Ray Diffration", Materials Science Forum, Vols. 196-201, pp. 1865-1870, 1995
Online since
November 1995
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