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Precipitates in Antimony Implanted Silicon

Journal Materials Science Forum (Volumes 196 - 201)
Volume Defects in Semiconductors 18
Edited by M. Suezawa and H. Katayama-Yoshida
Pages 1871-1874
DOI 10.4028/www.scientific.net/MSF.196-201.1871
Citation Yoshio Kikuchi et al., 1995, Materials Science Forum, 196-201, 1871
Authors Yoshio Kikuchi, F. Uesugi, S. Kaszczyszyn, Masataka Kase, M. Yoshida, K. Watanabe, I. Hashimoto
Keywords Antimony, Implantation, Precipitation, Silicon, TEM
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