Paper Title:
Secondary Defects and Deep Levels in N-Si Induced by High Energy P Ion Implantation
  Abstract

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Periodical
Materials Science Forum (Volumes 196-201)
Edited by
M. Suezawa and H. Katayama-Yoshida
Pages
1875-1880
DOI
10.4028/www.scientific.net/MSF.196-201.1875
Citation
S. Tatsukawa, Y. Nakahara, S. Matsumoto, "Secondary Defects and Deep Levels in N-Si Induced by High Energy P Ion Implantation", Materials Science Forum, Vols. 196-201, pp. 1875-1880, 1995
Online since
November 1995
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Price
$32.00
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