Paper Title:
High Energy Si, Zn and Ga Ion Implantation into GaAs on Si
  Abstract

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Periodical
Materials Science Forum (Volumes 196-201)
Edited by
M. Suezawa and H. Katayama-Yoshida
Pages
1881-1886
DOI
10.4028/www.scientific.net/MSF.196-201.1881
Citation
M. Tamura, T. Saitoh, "High Energy Si, Zn and Ga Ion Implantation into GaAs on Si", Materials Science Forum, Vols. 196-201, pp. 1881-1886, 1995
Online since
November 1995
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Price
$32.00
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