The Role of Point Defects in Non-Stoichiometric III-V Compounds |
| Journal |
Materials Science Forum (Volumes 196 - 201) |
| Volume |
Defects in Semiconductors 18 |
| Edited by |
M. Suezawa and H. Katayama-Yoshida |
| Pages |
189-194 |
| DOI |
10.4028/www.scientific.net/MSF.196-201.189 |
| Citation |
A. Prasad et al., 1995, Materials Science Forum, 196-201, 189 |
| Authors |
A. Prasad, X. Liu, H. Fujioka, N.D. Jäger, Johji Nishio, Eicke R. Weber |
| Keywords |
Antisite Defects, Low Temperature Grown GaAs, Magnetic Circular Dichroism, Non-Stoichiometry |
| Full Paper |
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