Paper Title:
Effects of Si3N4 Films on Diffusion of Boron and Extended Defects in Silicon during Post-Implantation Annealing
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Periodical
Materials Science Forum (Volumes 196-201)
Edited by
M. Suezawa and H. Katayama-Yoshida
Pages
1891-1896
DOI
10.4028/www.scientific.net/MSF.196-201.1891
Citation
Y. Zaitsu, K. Osada, T. Shimizu, S. Matsumoto, M. Yoshida, E. Arai, T. Abe, "Effects of Si3N4 Films on Diffusion of Boron and Extended Defects in Silicon during Post-Implantation Annealing", Materials Science Forum, Vols. 196-201, pp. 1891-1896, 1995
Online since
November 1995
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