Paper Title:
Room Temperature Defect Etching of III-V Compounds and Alloys Grown on Si Substate Using Hydrogen Fluoride and Nitric Acid
  Abstract

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Periodical
Materials Science Forum (Volumes 196-201)
Edited by
M. Suezawa and H. Katayama-Yoshida
Pages
1923-1926
DOI
10.4028/www.scientific.net/MSF.196-201.1923
Citation
H. Nishikawa, T. Soga, T. Jimbo, M. Umeno, "Room Temperature Defect Etching of III-V Compounds and Alloys Grown on Si Substate Using Hydrogen Fluoride and Nitric Acid", Materials Science Forum, Vols. 196-201, pp. 1923-1926, 1995
Online since
November 1995
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