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Novel Technique for Reliable AlGaAs/GaAs Light Emitting Diodes on Si Using GaAs Islands Active Regions

Journal Materials Science Forum (Volumes 196 - 201)
Volume Defects in Semiconductors 18
Edited by M. Suezawa and H. Katayama-Yoshida
Pages 1933-1938
DOI 10.4028/www.scientific.net/MSF.196-201.1933
Citation Yuki Hasegawa et al., 1995, Materials Science Forum, 196-201, 1933
Authors Yuki Hasegawa, Takashi Egawa, Takashi Jimbo, Masayoshi Umeno
Keywords Droplet Epitaxy, LEDs on Si, Reliability, Self-Formed GaAs Islands
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