Gettering of Iron Using Electrically Inactive Boron Doped Layer |
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| Journal | Materials Science Forum (Volumes 196 - 201) |
|---|---|
| Volume | Defects in Semiconductors 18 |
| Edited by | M. Suezawa and H. Katayama-Yoshida |
| Pages | 1991-1996 |
| DOI | 10.4028/www.scientific.net/MSF.196-201.1991 |
| Citation | Hiroshi Tomita et al., 1995, Materials Science Forum, 196-201, 1991 |
| Authors | Hiroshi Tomita, Mami Saito, Kikuo Yamabe |
| Keywords | Boron, Gettering, Iron, Poly-Silicon |
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