Ab Initio Calculation for G-Values of ESR Centers in a-Si:H |
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| Journal | Materials Science Forum (Volumes 196 - 201) |
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| Volume | Defects in Semiconductors 18 |
| Edited by | M. Suezawa and H. Katayama-Yoshida |
| Pages | 1997-0 |
| DOI | 10.4028/www.scientific.net/MSF.196-201.1997 |
| Citation | Hideki Katagiri, 1995, Materials Science Forum, 196-201, 1997 |
| Authors | Hideki Katagiri |
| Keywords | Electronic Structures, G-Value, Semiconductor |
| Full Paper | 
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