Bound Exciton Spectra in Semi-Insulating GaAs |
|
| Journal | Materials Science Forum (Volumes 196 - 201) |
|---|---|
| Volume | Defects in Semiconductors 18 |
| Edited by | M. Suezawa and H. Katayama-Yoshida |
| Pages | 201-206 |
| DOI | 10.4028/www.scientific.net/MSF.196-201.201 |
| Citation | H.P. Gislason et al., 1995, Materials Science Forum, 196-201, 201 |
| Authors | H.P. Gislason, B.H. Yang |
| Keywords | Bound Exciton, Lithium, Semi-Insulating GaAs |
| Full Paper | 
Get the full paper by clicking here
|
First page example
