Photoluminescence of Germanium Doped Gallium Arsenide |
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| Journal | Materials Science Forum (Volumes 196 - 201) |
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| Volume | Defects in Semiconductors 18 |
| Edited by | M. Suezawa and H. Katayama-Yoshida |
| Pages | 225-230 |
| DOI | 10.4028/www.scientific.net/MSF.196-201.225 |
| Citation | Taketo Watanabe et al., 1995, Materials Science Forum, 196-201, 225 |
| Authors | Taketo Watanabe, Masashi Suezawa, Koji Sumino |
| Keywords | Donor-Acceptor Pair, GaAs, Ge, Photoluminescence (PL) |
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