Free Electrons and Resonant Donor State in Gallium Nitride |
| Journal |
Materials Science Forum (Volumes 196 - 201) |
| Volume |
Defects in Semiconductors 18 |
| Edited by |
M. Suezawa and H. Katayama-Yoshida |
| Pages |
23-24 |
| DOI |
10.4028/www.scientific.net/MSF.196-201.23 |
| Citation |
P. Perlin et al., 1995, Materials Science Forum, 196-201, 23 |
| Authors |
P. Perlin, T. Suski, H. Teisseyre, M. Leszczyński, I. Grzegory, J. Jun, M. Boćkowski, Sylwester Porowski, P. Boguslawski, J. Bernholc, T.D. Moustakas |
| Keywords |
Gallium Nitride, High Pressure, Resonant Donor |
| Full Paper |
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