Effects of Activation Annealing on Thermally Stimulated Current in Semi-Insulating LEC GaAs Substrates |
| Journal |
Materials Science Forum (Volumes 196 - 201) |
| Volume |
Defects in Semiconductors 18 |
| Edited by |
M. Suezawa and H. Katayama-Yoshida |
| Pages |
243-248 |
| DOI |
10.4028/www.scientific.net/MSF.196-201.243 |
| Citation |
H. Yoshida et al., 1995, Materials Science Forum, 196-201, 243 |
| Authors |
H. Yoshida, Makoto Kiyama, T. Takebe, Masashi Yamashita, K. Fujita |
| Keywords |
Anneal, Deep Level, Defect, GaAs, Thermally Stimulated Currents |
| Full Paper |
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