Arsenic-Antisite-Related Defects in GaAs Grown at Low Temperature: Charaterization of Localized States |
| Journal |
Materials Science Forum (Volumes 196 - 201) |
| Volume |
Defects in Semiconductors 18 |
| Edited by |
M. Suezawa and H. Katayama-Yoshida |
| Pages |
249-254 |
| DOI |
10.4028/www.scientific.net/MSF.196-201.249 |
| Citation |
J.I. Landman et al., 1995, Materials Science Forum, 196-201, 249 |
| Authors |
J.I. Landman, C.G. Morgan, J.T. Schick, A. Kumar, P. Papoulias, M.F. Kramer |
| Keywords |
Arsenic Antisites, Low Temperature GaAs |
| Full Paper |
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