Paper Title:
Arsenic-Antisite-Related Defects in GaAs Grown at Low Temperature: Charaterization of Localized States
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 196-201)
Edited by
M. Suezawa and H. Katayama-Yoshida
Pages
249-254
DOI
10.4028/www.scientific.net/MSF.196-201.249
Citation
J.I. Landman, C.G. Morgan, J.T. Schick, A. Kumar, P. Papoulias, M.F. Kramer, "Arsenic-Antisite-Related Defects in GaAs Grown at Low Temperature: Charaterization of Localized States", Materials Science Forum, Vols. 196-201, pp. 249-254, 1995
Online since
November 1995
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Price
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