Electrically and Optically Detected Magnetic Resonance Studies of GaN-Based Heterostructures |
| Journal |
Materials Science Forum (Volumes 196 - 201) |
| Volume |
Defects in Semiconductors 18 |
| Edited by |
M. Suezawa and H. Katayama-Yoshida |
| Pages |
25-30 |
| DOI |
10.4028/www.scientific.net/MSF.196-201.25 |
| Citation |
W.E. Carlos et al., 1995, Materials Science Forum, 196-201, 25 |
| Authors |
W.E. Carlos, E.R. Glaser, T.A. Kennedy, Satoshi Nakamura |
| Keywords |
Electrically Detected Magnetic Resonance, Electroluminescence, Electron Spin Resonance, Galium Nitride (GaN) |
| Full Paper |
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