Generation of EL2- Level Upon Rapid Thermal Annealing in Low-Temperature GaAs Layers Grown by MBE |
| Journal |
Materials Science Forum (Volumes 196 - 201) |
| Volume |
Defects in Semiconductors 18 |
| Edited by |
M. Suezawa and H. Katayama-Yoshida |
| Pages |
255-260 |
| DOI |
10.4028/www.scientific.net/MSF.196-201.255 |
| Citation |
T.-C. Lin et al., 1995, Materials Science Forum, 196-201, 255 |
| Authors |
T.-C. Lin, S. Indou, T. Okumura |
| Keywords |
DLTS, EL2 Level, Excess Arsenic, GaAs, LT-MBE, Photoquenching, RTA |
| Full Paper |
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