Thermal and Optical Emission Processes of Electrons and Holes from EL2 in N- and P-Type GaAs |
| Journal |
Materials Science Forum (Volumes 196 - 201) |
| Volume |
Defects in Semiconductors 18 |
| Edited by |
M. Suezawa and H. Katayama-Yoshida |
| Pages |
261-266 |
| DOI |
10.4028/www.scientific.net/MSF.196-201.261 |
| Citation |
Hideyo Okushi et al., 1995, Materials Science Forum, 196-201, 261 |
| Authors |
Hideyo Okushi, Takashi Sekiguchi, Y. Tokumaru, Koji Sumino |
| Keywords |
EL2, GaAs, ICTS, Optical Emission Rate, Thermal Emission Rate |
| Full Paper |
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