Studies of Deep Levels in n-GaAs by SADLTS |
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| Journal | Materials Science Forum (Volumes 196 - 201) |
|---|---|
| Volume | Defects in Semiconductors 18 |
| Edited by | M. Suezawa and H. Katayama-Yoshida |
| Pages | 267-272 |
| DOI | 10.4028/www.scientific.net/MSF.196-201.267 |
| Citation | K. Sato et al., 1995, Materials Science Forum, 196-201, 267 |
| Authors | K. Sato, K. Tanaka, J. Yoshino, Yoshihiro Okamoto, J. Morimoto, T. Miyakawa |
| Keywords | DLTS, EL2, EL3, Emission Rate Spectrum, GaAs, SADLTS |
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