Carrier Localization in Gallium Nitride |
| Journal |
Materials Science Forum (Volumes 196 - 201) |
| Volume |
Defects in Semiconductors 18 |
| Edited by |
M. Suezawa and H. Katayama-Yoshida |
| Pages |
31-36 |
| DOI |
10.4028/www.scientific.net/MSF.196-201.31 |
| Citation |
C. Wetzel et al., 1995, Materials Science Forum, 196-201, 31 |
| Authors |
C. Wetzel, W. Walukiewicz, Eugene E. Haller, J.W. Ager, A. Chen, S. Fischer, P.Y. Yu, R. Jeanloz, I. Grzegory, Sylwester Porowski, T. Suski, Hiroshi Amano, Isamu Akasaki |
| Keywords |
Donor, Galium Nitride (GaN), Hydrostatic Pressure, Infrared, RAMAN |
| Full Paper |
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