Paper Title:
In Situ Phosphorus Doping of Si and Si1-xGex Epitaxial Layers by RTP/VLP-CVD
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 196-201)
Edited by
M. Suezawa and H. Katayama-Yoshida
Pages
349-352
DOI
10.4028/www.scientific.net/MSF.196-201.349
Citation
X. D. Huang, P. Han, Y. Shi, Y. D. Zheng, L. Q. Hu, R. H. Wang, S. M. Zhu, "In Situ Phosphorus Doping of Si and Si1-xGex Epitaxial Layers by RTP/VLP-CVD", Materials Science Forum, Vols. 196-201, pp. 349-352, 1995
Online since
November 1995
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