Paper Title:
Influence of Cu Contamination and Hydrogenation on Recombination Activity of Misfit Dislocations in SiGe/Si Epilayers
  Abstract

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Periodical
Materials Science Forum (Volumes 196-201)
Edited by
M. Suezawa and H. Katayama-Yoshida
Pages
383-388
DOI
10.4028/www.scientific.net/MSF.196-201.383
Citation
M. Kittler, C. Ulhaq-Bouillet, V. Higgs, "Influence of Cu Contamination and Hydrogenation on Recombination Activity of Misfit Dislocations in SiGe/Si Epilayers", Materials Science Forum, Vols. 196-201, pp. 383-388, 1995
Online since
November 1995
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