Luminescence of Doped and Undoped Bulk Crystals of GaN |
| Journal |
Materials Science Forum (Volumes 196 - 201) |
| Volume |
Defects in Semiconductors 18 |
| Edited by |
M. Suezawa and H. Katayama-Yoshida |
| Pages |
43-48 |
| DOI |
10.4028/www.scientific.net/MSF.196-201.43 |
| Citation |
H. Teisseyre et al., 1995, Materials Science Forum, 196-201, 43 |
| Authors |
H. Teisseyre, T. Suski, P. Perlin, I. Gorczyca, M. Leszczyński, I. Grzegory, J. Jun, Sylwester Porowski |
| Keywords |
Gallium Nitride, Photoluminescence (PL), Zn- and Mg-Impurities |
| Full Paper |
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