Paper Title:
Shallow and Deep Centers in Heavily Doped Silicon Quantum Wells
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 196-201)
Edited by
M. Suezawa and H. Katayama-Yoshida
Pages
467-472
DOI
10.4028/www.scientific.net/MSF.196-201.467
Citation
W. Gehlhoff, N. T. Bagraev, L.E. Klyachkin, "Shallow and Deep Centers in Heavily Doped Silicon Quantum Wells", Materials Science Forum, Vols. 196-201, pp. 467-472, 1995
Online since
November 1995
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Price
$32.00
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