Paper Title:
Important Nonradiative Grown-In Defects in MBE-Grown Si and SiGe/Si Heterostructures
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 196-201)
Edited by
M. Suezawa and H. Katayama-Yoshida
Pages
473-478
DOI
10.4028/www.scientific.net/MSF.196-201.473
Citation
W.M. Chen, I.A. Buyanova, A. Henry, W.X. Ni, G.V. Hansson, B. Monemar, "Important Nonradiative Grown-In Defects in MBE-Grown Si and SiGe/Si Heterostructures", Materials Science Forum, Vols. 196-201, pp. 473-478, 1995
Online since
November 1995
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.