Paper Title:
Defect Formation and Recombination Processes in p-Type Modulation-Doped Si Epilayers
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 196-201)
Edited by
M. Suezawa and H. Katayama-Yoshida
Pages
479-484
DOI
10.4028/www.scientific.net/MSF.196-201.479
Citation
I.A. Buyanova, W.M. Chen, A. Henry, W.X. Ni, G.V. Hansson, B. Monemar, "Defect Formation and Recombination Processes in p-Type Modulation-Doped Si Epilayers", Materials Science Forum, Vols. 196-201, pp. 479-484, 1995
Online since
November 1995
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.