Photoluminescent Properties of Undoped GaN Prepared by Atmospheric Vapor Phase Epitaxy |
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| Journal | Materials Science Forum (Volumes 196 - 201) |
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| Volume | Defects in Semiconductors 18 |
| Edited by | M. Suezawa and H. Katayama-Yoshida |
| Pages | 49-54 |
| DOI | 10.4028/www.scientific.net/MSF.196-201.49 |
| Authors | Gyu-Chul Yi, Bruce W. Wessels |
| Keywords | Atmospheric Metal-Organic Vapor Phase Epitaxy, Galium Nitride (GaN), Photoluminescence |
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