Paper Title:
Photoluminescent Properties of Undoped GaN Prepared by Atmospheric Vapor Phase Epitaxy
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 196-201)
Edited by
M. Suezawa and H. Katayama-Yoshida
Pages
49-54
DOI
10.4028/www.scientific.net/MSF.196-201.49
Citation
G.-C. Yi, B. W. Wessels, "Photoluminescent Properties of Undoped GaN Prepared by Atmospheric Vapor Phase Epitaxy", Materials Science Forum, Vols. 196-201, pp. 49-54, 1995
Online since
November 1995
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Price
$32.00
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