Paper Title:
High Quality GaAs on Si Grown by CBE
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 196-201)
Edited by
M. Suezawa and H. Katayama-Yoshida
Pages
535-538
DOI
10.4028/www.scientific.net/MSF.196-201.535
Citation
H. Uchida, M. Adachi, T. Egawa, H. Nishikawa, T. Jimbo, M. Umeno, "High Quality GaAs on Si Grown by CBE", Materials Science Forum, Vols. 196-201, pp. 535-538, 1995
Online since
November 1995
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Price
$32.00
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