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Variation of 2DEG-Properties on Hetrointerface Caused by the Surface Defects Recharging, p.523
Stucture of the P_b Center: Endor Investigation, p.529
High Quality GaAs on Si Grown by CBE, p.535
Control of Defects in GaAs/GaInP Interface Grown by MOVPE, p.539
Ab Initio Study of Cl Impurity at GaAs Surfaces, p.543
Influence of Dislocations on the Transport Properties of Two Dimensional Electron Gas in the Quantum Regim, p.549
High-Performance Al(Ga)As/GaAs Resonant Tunneling Diodes Achieved by the Control of Structural Defects at the Interface, p.555
Strain Characterization of Hg_1-xFe_xSe-Layers by Electron Spin Resonance, p.561
Photoreflectance, Reflectivity and Photoluminescence of MOVPE Grown ZnSe/GaAs Epilayers and ZnSeS/ZnSe Superlattices, p.567

Home > Materials Science Forum > Defects in Semiconductors 18 > Ab Initio Study of Cl Impurity at GaAs Surfaces

Paper Title:

Ab Initio Study of Cl Impurity at GaAs Surfaces

Periodical	Materials Science Forum (Volumes 196 - 201)
Main Theme	Defects in Semiconductors 18
Edited by	M. Suezawa and H. Katayama-Yoshida
Pages	543-548
DOI	10.4028/www.scientific.net/MSF.196-201.543
Citation	Takahisa Ohno et al., 1995, Materials Science Forum, 196-201, 543
Authors	Takahisa Ohno, Taizo Sasaki
Keywords	Ab Initio Pseudopotential, CI, GaAs, Surface, Total Energy
Price	US$ 28,-

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