Charactrization of Residual Transition Metal Ions in GaN and AIN |
| Journal |
Materials Science Forum (Volumes 196 - 201) |
| Volume |
Defects in Semiconductors 18 |
| Edited by |
M. Suezawa and H. Katayama-Yoshida |
| Pages |
55-60 |
| DOI |
10.4028/www.scientific.net/MSF.196-201.55 |
| Citation |
J. Baur et al., 1995, Materials Science Forum, 196-201, 55 |
| Authors |
J. Baur, Ulrich Kaufmann, M. Kunzer, J. Schneider, Hiroshi Amano, Isamu Akasaki, T. Detchprohm, K. Hiramatsu |
| Keywords |
Aluminium Nitride (AlN), Chromium, Electron Spin Resonance, Galium Nitride (GaN), Photoluminescence (PL), Transition Metal, Vanadium |
| Full Paper |
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