Paper Title:
High-Performance Al(Ga)As/GaAs Resonant Tunneling Diodes Achieved by the Control of Structural Defects at the Interface
  Abstract

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Periodical
Materials Science Forum (Volumes 196-201)
Edited by
M. Suezawa and H. Katayama-Yoshida
Pages
555-560
DOI
10.4028/www.scientific.net/MSF.196-201.555
Citation
M. Shinohara, H. Yokoyama, N. Inoue, "High-Performance Al(Ga)As/GaAs Resonant Tunneling Diodes Achieved by the Control of Structural Defects at the Interface", Materials Science Forum, Vols. 196-201, pp. 555-560, 1995
Online since
November 1995
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Price
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