Sn Mössbauer Study of Ion Implanted GaN |
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| Journal | Materials Science Forum (Volumes 196 - 201) |
|---|---|
| Volume | Defects in Semiconductors 18 |
| Edited by | M. Suezawa and H. Katayama-Yoshida |
| Pages | 61-66 |
| DOI | 10.4028/www.scientific.net/MSF.196-201.61 |
| Citation | M. Fanciulli et al., 1995, Materials Science Forum, 196-201, 61 |
| Authors | M. Fanciulli, M. Lindroos, G. Weyer, T.D. Moustakas |
| Keywords | Annealing, Galium Nitride (GaN), Implantation |
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