Paper Title:
Electrically Active Centers in Silicon Doped with Erbium
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 196-201)
Edited by
M. Suezawa and H. Katayama-Yoshida
Pages
615-620
DOI
10.4028/www.scientific.net/MSF.196-201.615
Citation
V. V. Emtsev, O.V. Alexandrov, D.S. Poloskin, E. I. Shek, N.A. Sobolev, "Electrically Active Centers in Silicon Doped with Erbium", Materials Science Forum, Vols. 196-201, pp. 615-620, 1995
Online since
November 1995
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Price
$32.00
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