Paper Title:
Generation of Deep Level by Nitrogen Diffusion in Si
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 196-201)
Edited by
M. Suezawa and H. Katayama-Yoshida
Pages
797-802
DOI
10.4028/www.scientific.net/MSF.196-201.797
Citation
N. Fuma, K. Tashiro, K. Kakumoto, Y. Takano, "Generation of Deep Level by Nitrogen Diffusion in Si", Materials Science Forum, Vols. 196-201, pp. 797-802, 1995
Online since
November 1995
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Price
$32.00
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