Optical and Magnetic Resonance Studies of Defects in GaN |
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| Journal | Materials Science Forum (Volumes 196 - 201) |
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| Volume | Defects in Semiconductors 18 |
| Edited by | M. Suezawa and H. Katayama-Yoshida |
| Pages | 9-16 |
| DOI | 10.4028/www.scientific.net/MSF.196-201.9 |
| Citation | E.R. Glaser, 1995, Materials Science Forum, 196-201, 9 |
| Authors | E.R. Glaser |
| Keywords | Donor and Acceptor States, Galium Nitride (GaN), Magnetic Resonance, Photoluminescence (PL) |
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