Ga Bound Excitons in 6H-SiC |
| Journal |
Materials Science Forum (Volumes 196 - 201) |
| Volume |
Defects in Semiconductors 18 |
| Edited by |
M. Suezawa and H. Katayama-Yoshida |
| Pages |
91-96 |
| DOI |
10.4028/www.scientific.net/MSF.196-201.91 |
| Citation |
Anne Henry et al., 1995, Materials Science Forum, 196-201, 91 |
| Authors |
Anne Henry, Christer Hallin, Ivan G. Ivanov, Peder Bergman, Olof Kordina, Bo Monemar, Erik Janzén |
| Keywords |
Bound-Exciton, Gallium, Photoluminescence (PL), Silicon Carbide (SiC) |
| Full Paper |
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