Acceptor-Hydrogen Interaction in Ternary III-V Semiconductors |
| Journal |
Materials Science Forum (Volumes 196 - 201) |
| Volume |
Defects in Semiconductors 18 |
| Edited by |
M. Suezawa and H. Katayama-Yoshida |
| Pages |
987-992 |
| DOI |
10.4028/www.scientific.net/MSF.196-201.987 |
| Citation |
A. Burchard et al., 1995, Materials Science Forum, 196-201, 987 |
| Authors |
A. Burchard, Manfred Deicher, Doris Forkel-Wirth, J. Freidinger, T. Kerle, R. Magerle, Wulf Pfeiffer, W. Prost, Peter J. Wellmann, Albrecht Winnacker |
| Keywords |
AlGaAs, GaInP, Hydrogen, InGaAs, PAC |
| Full Paper |
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