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Defects in Semiconductors 18

Materials Science Forum Volumes 196 - 201

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• p1713 Growth Parameters Determining the Type of Grown-In Defects in Czockralski Silicon Crystals   [ 417 K ]
  Authors: M. Hourai, E. Kajita, T. Nagashima, H. Fujiwara, S. Umeno, S. Sadamitsu, Sakito Miki, T. Shigematsu
• p1719 Effect of Magnetic Field and Heat Treatment on the Grown-in Defects in MCZ Si Single Crystals   [ 254 K ]
  Authors: T.M. Tkacheva, G.N. Petrov, Leonid I. Datsenko
• p1725 Annealing Behavior of a Ligth ScatteringTomography Detected Defect near the Surface of Si Wafers   [ 195 K ]
  Authors: Jun Furukawa, Noriyuki Iwaoka, Hiroshi Furuya
• p1731 Influence of Point Defect Concentration in Growing CZ-SI on the Formation Temperature of the Defects Affecting Gate Oxide Integrity   [ 343 K ]
  Authors: T. Iwasaki, Hiroshi Harada, Hiroyo Haga
• p1737 Genration of Oxidation Induced Stacking Faults in CZ Silicon Wafers   [ 324 K ]
  Authors: Koji Sueoka, M. Akatsuka, K. Nishihara, T. Yamamoto, S. Kobayashi
• p1743 Relation between Minute Lattice Strain and Anomalous Oxygen Precipitation in a Czochralski-Grown Silicon Crystal   [ 400 K ]
  Authors: Shigeru Kimura, Taeko Ikarashi, Akio Tanikawa, Tetsuya Ishikawa
• p1749 Photoluminescence Due To Oxygen Precipitates Distinguished from the D Lines in Annealed Si   [ 368 K ]
  Authors: Michio Tajima, Masao Tokita, M. Warashina
• p1755 Lattice Defects in High Quality As-Grown CZ Silicon, Studied with Ligth Scattering and Preferential Etching Techniques   [ 267 K ]
  Authors: Jan Vanhellemont, G. Kissinger, D. Gräf, Karine Kenis, M. Depas, Paul W. Mertens, U. Lambert, Marc M. Heyns, C. Claeys, Hans Richter, P. Wagner
• p1761 Microdefects in Nitrogen Doped FZ Silicon Revealed by Li⁺ Drifting   [ 305 K ]
  Authors: W.B. Knowlton, J.T. Walton, J.S. Lee, Y.K. Wong, Eugene E. Haller, Wilfried von Ammon, W. Zulehner
• p1767 Influence of Al Doping on Deep Levels in MBE GaAs   [ 278 K ]
  Authors: Umar S. Qurashi, M. Zafar Iqbal, N. Baber, T.G. Andersson
• p1773 Deep Donor - Acceptor Correlations in Low Temperature GaAs   [ 246 K ]
  Authors: K. Korona, Maria Kaminska, Jacek M. Baranowski
• p1779 Dislocation Reduction of GaAs and AIGaAs on Si Substrate for High Efficiency Solar Cell   [ 227 K ]
  Authors: T. Soga, M Yang, Tomohisa Kato, Takashi Jimbo, Masayoshi Umeno
• p1785 Spatial Distribution of Microdefects around Dislocations in Si-Doped GaAs   [ 352 K ]
  Authors: R. Toba, M. Warashina, Michio Tajima
• p1791 Study of the Dislocation Atmospheres in N-Type GaAs by DSL Photoetching, EBIC and Microraman Measurements   [ 259 K ]
  Authors: P. Martín, J. Jiménez, C. Frigeri, J. Weyher, K. Sonnenberg
• p1797 Study of Gallium and Antimony Cluster Formation în GaSb Bulk Crystals Grown from Nonstoichiometric Melts   [ 276 K ]
  Authors: N.A. Bert, V.V. Chaldyshev, A.E. Kunitsyn, A.G. Milvidskaya, M.G. Mil'vidskii