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Defects in Semiconductors 18

Materials Science Forum Volumes 196 - 201

• Papers
• Abstracts

• p179 Native Point Defect Equilibria and the Phase Extent of Gallium Arsenide   [ 497 K ]
  Authors: D.T.J. Hurle
• p189 The Role of Point Defects in Non-Stoichiometric III-V Compounds   [ 306 K ]
  Authors: A. Prasad, X. Liu, H. Fujioka, N.D. Jäger, Johji Nishio, Eicke R. Weber
• p195 Intrinsic Acceptors in Semi-Insulating Galliumarsenide Studied by Positron Annihilation and ODMR   [ 315 K ]
  Authors: K. Krambrock, C. Le Berre, C. Corbel, Kimmo Saarinen, Pekka J. Hautojärvi
• p201 Bound Exciton Spectra in Semi-Insulating GaAs   [ 315 K ]
  Authors: H.P. Gislason, B.H. Yang
• p207 Oscillations in PLE Spectra of Li Passivated GaAs, Related to Interstitial Li Donors   [ 277 K ]
  Authors: J. Pétursson, S.Þ. Ingvarsson, B.H. Yang, H.P. Gislason
• p213 Magneto-Optical and Odendor Investigations of the Substitutional Oxygen Defect in Galliumarsenide   [ 280 K ]
  Authors: Matthias Linde, H.C. Alt, Johann Martin Spaeth
• p219 Identification of Phonon Scattering Resonances with Defects in Gallium Arsenide   [ 266 K ]
  Authors: F. Maier, R. Eilenberger, Werner Beck, K. Lassmann
• p225 Photoluminescence of Germanium Doped Gallium Arsenide   [ 275 K ]
  Authors: Taketo Watanabe, Masashi Suezawa, Koji Sumino
• p231 Effect of Donor Nature on Behavior of Photoluminescence of the Gallium Vacancy - Shallow Donor Complexes in n-Type GaAs under Uniaxial Pressure   [ 244 K ]
  Authors: A.A. Gutkin, Nikita S. Averkiev, M.A. Reshchikov, V.E. Sedov
• p237 Structure of the 0.95 eV Photoluminescence Centers in n-Type GaAs   [ 214 K ]
  Authors: M.A. Reshchikov, A.A. Gutkin, V.E. Sedov
• p243 Effects of Activation Annealing on Thermally Stimulated Current in Semi-Insulating LEC GaAs Substrates   [ 270 K ]
  Authors: H. Yoshida, Makoto Kiyama, T. Takebe, Masashi Yamashita, K. Fujita
• p249 Arsenic-Antisite-Related Defects in GaAs Grown at Low Temperature: Charaterization of Localized States   [ 286 K ]
  Authors: J.I. Landman, C.G. Morgan, J.T. Schick, A. Kumar, P. Papoulias, M.F. Kramer
• p255 Generation of EL2- Level Upon Rapid Thermal Annealing in Low-Temperature GaAs Layers Grown by MBE   [ 265 K ]
  Authors: T.-C. Lin, S. Indou, T. Okumura
• p261 Thermal and Optical Emission Processes of Electrons and Holes from EL2 in N- and P-Type GaAs   [ 238 K ]
  Authors: Hideyo Okushi, Takashi Sekiguchi, Y. Tokumaru, Koji Sumino
• p267 Studies of Deep Levels in n-GaAs by SADLTS   [ 225 K ]
  Authors: K. Sato, K. Tanaka, J. Yoshino, Yoshihiro Okamoto, J. Morimoto, T. Miyakawa