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Defects in Semiconductors 18

Materials Science Forum Volumes 196 - 201

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• p273 Trends in the Metastability of DX-Centers   [ 202 K ]
  Authors: T.M. Schmidt, A. Fazzio, Marilia J. Caldas
• p279 Carrier Concentrations Saturation in n Type Al_xGa_1-xAs   [ 226 K ]
  Authors: A.Y. Du, Ming Fu Li, T.C. Chong, S.J. Chua
• p285 Doping Puzzles in II-VI and III-V Semiconductors   [ 460 K ]
  Authors: D.J. Chadi, C.H. Park
• p293 Theoretical Study on Hole Compensation Mechanism: - Stability of Two Nitrogen Atoms at SE Substitutional Site of ZNSE -   [ 194 K ]
  Authors: Taketoshi Nakao, Masakatsu Suzuki, Takeshi Uenoyama, Yusuke Funayose
• p297 Acceptor Compensation in Nitrogen Doped Zinc Selenide   [ 195 K ]
  Authors: C.D. Song, Yu Hou Wu, Masashi Suezawa, F. Nishiyama, Hiroshi Katayama-Yoshida, Takeshi Yao
• p303 Nitrogen-Doping Efficiency in ZnSe and ZnTe   [ 234 K ]
  Authors: Byoung Ho Cheong, K.J. Chang
• p309 Doping of ZnSe, ZnTe, and CdTe with Group V Elements   [ 265 K ]
  Authors: Herbert Wolf, A. Burchard, Manfred Deicher, T. Filz, A. Jost, St. Lauer, R. Magerle, V. Ostheimer, Wulf Pfeiffer, Th. Wichert
• p315 Lattice Sites of Ion Implanted Li in Zn-Rich ZnSe   [ 333 K ]
  Authors: S.G. Jahn, Ulrich Wahl, M. Restle, H. Quintel, H. Hofsäss, M. Wienecke, I. Trojahn
• p321 Intrinsic Defects in ZnSe, ZnTe, and CdS Doped with Li   [ 321 K ]
  Authors: Herbert Wolf, A. Jost, R. Lermen, T. Filz, V. Ostheimer, Th. Wichert
• p327 The Electronic Structure of Deep Donors and the Nature of the Anion Vacancy in II-VI Compound Semiconductors   [ 252 K ]
  Authors: M. Illgner, Harald Overhof
• p333 Studies of Defects in Electron and Proton Irradiated ZnO by Positron Annihilation   [ 293 K ]
  Authors: Werner Puff, S. Brunner, Peter Mascher, Adam G. Balogh
• p339 Photoluminescence of Bulk Si-Ge Single Crystals   [ 222 K ]
  Authors: T. Honda, Masashi Suezawa, Koji Sumino
• p345 Dopant Diffusion in Strained and Relaxed Si_1-xGe_x   [ 191 K ]
  Authors: A.D.N. Paine, Masami Morooka, Arthur F.W. Willoughby, Janet M. Bonar, P. Phillips, M.G. Dowsett, G. Cooke
• p349 In Situ Phosphorus Doping of Si and Si_1-xGe_x Epitaxial Layers by RTP/VLP-CVD   [ 116 K ]
  Authors: Xiao Dong Huang, Ping Han, Yi Shi, You Dou Zheng, Li Qun Hu, Rong Hua Wang, Shun Ming Zhu
• p353 Electrical Transport in Si_xGe_1-x Bulk Alloys   [ 265 K ]
  Authors: Teimuraz Mchedlidze, Ichiro Yonenaga, A. Matsui, Koji Sumino