Main Theme:

Defects in Semiconductors 18

Volumes 196 - 201
doi: 10.4028/www.scientific.net/MSF.196-201
Paper Titles published in this Main Theme:
Paper Title Page

Native Point Defect Equilibria and the Phase Extent of Gallium Arsenide

Authors: D.T.J. Hurle

179

The Role of Point Defects in Non-Stoichiometric III-V Compounds

Authors: A. Prasad, X. Liu, H. Fujioka, N.D. Jäger, Johji Nishio, Eicke R. Weber

189

Intrinsic Acceptors in Semi-Insulating Galliumarsenide Studied by Positron Annihilation and ODMR

Authors: K. Krambrock, C. Le Berre, C. Corbel, Kimmo Saarinen, Pekka J. Hautojärvi

195

Bound Exciton Spectra in Semi-Insulating GaAs

Authors: H.P. Gislason, B.H. Yang

201

Oscillations in PLE Spectra of Li Passivated GaAs, Related to Interstitial Li Donors

Authors: J. Pétursson, S.Þ. Ingvarsson, B.H. Yang, H.P. Gislason

207

Magneto-Optical and Odendor Investigations of the Substitutional Oxygen Defect in Galliumarsenide

Authors: Matthias Linde, H.C. Alt, Johann Martin Spaeth

213

Identification of Phonon Scattering Resonances with Defects in Gallium Arsenide

Authors: F. Maier, R. Eilenberger, Werner Beck, K. Lassmann

219

Photoluminescence of Germanium Doped Gallium Arsenide

Authors: Taketo Watanabe, Masashi Suezawa, Koji Sumino

225

Effect of Donor Nature on Behavior of Photoluminescence of the Gallium Vacancy - Shallow Donor Complexes in n-Type GaAs under Uniaxial Pressure

Authors: A.A. Gutkin, Nikita S. Averkiev, M.A. Reshchikov, V.E. Sedov

231

Structure of the 0.95 eV Photoluminescence Centers in n-Type GaAs

Authors: M.A. Reshchikov, A.A. Gutkin, V.E. Sedov

237

Showing 31 to 40 of 335 Paper Titles