Main Theme:
Defects in Semiconductors 18
Volumes 196 - 201
doi:
10.4028/www.scientific.net/MSF.196-201
Paper Titles published in this Main Theme:
| Paper Title |
Page |
|
Native Point Defect Equilibria and the Phase Extent of Gallium Arsenide
Authors: D.T.J. Hurle
|
179
|
|
The Role of Point Defects in Non-Stoichiometric III-V Compounds
Authors: A. Prasad, X. Liu, H. Fujioka, N.D. Jäger, Johji Nishio, Eicke R. Weber
|
189
|
|
Intrinsic Acceptors in Semi-Insulating Galliumarsenide Studied by Positron Annihilation and ODMR
Authors: K. Krambrock, C. Le Berre, C. Corbel, Kimmo Saarinen, Pekka J. Hautojärvi
|
195
|
|
Bound Exciton Spectra in Semi-Insulating GaAs
Authors: H.P. Gislason, B.H. Yang
|
201
|
|
Oscillations in PLE Spectra of Li Passivated GaAs, Related to Interstitial Li Donors
Authors: J. Pétursson, S.Þ. Ingvarsson, B.H. Yang, H.P. Gislason
|
207
|
|
Magneto-Optical and Odendor Investigations of the Substitutional Oxygen Defect in Galliumarsenide
Authors: Matthias Linde, H.C. Alt, Johann Martin Spaeth
|
213
|
|
Identification of Phonon Scattering Resonances with Defects in Gallium Arsenide
Authors: F. Maier, R. Eilenberger, Werner Beck, K. Lassmann
|
219
|
|
Photoluminescence of Germanium Doped Gallium Arsenide
Authors: Taketo Watanabe, Masashi Suezawa, Koji Sumino
|
225
|
|
Effect of Donor Nature on Behavior of Photoluminescence of the Gallium Vacancy - Shallow Donor Complexes in n-Type GaAs under Uniaxial Pressure
Authors: A.A. Gutkin, Nikita S. Averkiev, M.A. Reshchikov, V.E. Sedov
|
231
|
|
Structure of the 0.95 eV Photoluminescence Centers in n-Type GaAs
Authors: M.A. Reshchikov, A.A. Gutkin, V.E. Sedov
|
237
|
Showing 31 to 40 of 335 Paper Titles