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Defects in Semiconductors 18

Materials Science Forum Volumes 196 - 201

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• p713 Electronic Properties of GaAs Doped with Copper   [ 288 K ]
  Authors: B.H. Yang, H.P. Gislason
• p719 Zeeman Spectroscopy of Transition Metals in Hexagonal GaN   [ 300 K ]
  Authors: R. Heitz, P. Thurian, I. Loa, L. Eckey, Andreas Hoffmann, I. Broser, Klaus Pressel, B.K. Meyer, E.N. Mokhov
• p725 Paramagnetic Resonance of the Neutral Maganese Acceptor in GaP   [ 268 K ]
  Authors: J. Kreissl, W. Ulrici, M. El-Metoui, A.M. Vasson, A. Gavaix
• p731 Piezo-Spectroscopic Study of the V³⁺ Photoluminescence in GaP:V:S   [ 276 K ]
  Authors: S. Steck, G. Rückert, Klaus Thonke, W. Ulrici, R. Sauer
• p737 Electron Paramagnetic Resonance of the Mn-Impurity in ZnS Nanocrystals   [ 234 K ]
  Authors: T.A. Kennedy, E.R. Glaser, Paul B. Klein, R.N. Bhargava
• p743 Zeeman Splitting and Isotope Shift of Optical Transitions at Ni²⁺ Centers in Cubic ZnS   [ 279 K ]
  Authors: Christoph Schrepel, J. Schöpp, R. Heitz, Andreas Hoffmann, Udo Scherz
• p749 Energy States of Ni and Band Offsets in Zn_1-xCd_xSe(Ni) and ZnS_xSe_1-x(Ni) Alloys   [ 201 K ]
  Authors: T.P. Surkova, W. Giriat, M. Godlewski, P. Kaczor, M. Surma, S.A. Permogorov, L.N. Tenishev
• p755 Intermdiately Bound Excitons in Wurtzit Type Semiconducturs Doped with Transition Metal Impurities   [ 279 K ]
  Authors: P. Dahan, V.B. Fleurov, K.A. Kikoin
• p761 Iron and Nickel as Centers of Nonradiative Recombination in ZnS and ZnSe   [ 244 K ]
  Authors: M. Surma, A.J. Zakrzewski, M. Godlewski
• p767 Nonlinear Zeeman Behaviour of Copper Centers in ZnS and CdS   [ 249 K ]
  Authors: T. Telahun, P. Thurian, Andreas Hoffmann, I. Broser, Udo Scherz
• p773 Electron Paramagnetic Resonance and Optical Studies of Vanadium-Doped ZnTe   [ 266 K ]
  Authors: J. Kreissl, K. Irmscher, P. Peka, M.U. Lehr, H.-J. Schulz, U.W. Pohl
• p779 The Titanium and Vanadium Donor in CdTe   [ 239 K ]
  Authors: P. Christmann, J. Kreissl, D. Hofmann, B.K. Meyer, R. Schwarz, K.W. Benz
• p785 Peculiarities of Interstitial Carbon and Di-Carbon Defects in Si   [ 304 K ]
  Authors: R. Jones, Sven Öberg, P. Leary, V. Torres
• p791 The NNO Defect in Silicon   [ 276 K ]
  Authors: F. Berg Rasmussen, Sven Öberg, R. Jones, C.P. Ewels, Jonathan P. Goss, J. Miró, Peter Deák
• p797 Generation of Deep Level by Nitrogen Diffusion in Si   [ 197 K ]
  Authors: N. Fuma, K. Tashiro, K. Kakumoto, Y. Takano