Paper Title:
The Influence of an Ultrathin Pseudomorphic Interface Control Layer of Si on the Growth of SrF2 on GaAs
  Abstract

  Info
Periodical
Edited by
A.M. Mancini, C. Paorici and M.L. Terranova
Pages
129-136
DOI
10.4028/www.scientific.net/MSF.203.129
Citation
S. Heun, M. Sugiyama, S. Maeyama, Y. Watanabe, K. Wada, M. Oshima, "The Influence of an Ultrathin Pseudomorphic Interface Control Layer of Si on the Growth of SrF2 on GaAs", Materials Science Forum, Vol. 203, pp. 129-136, 1996
Online since
February 1996
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Price
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