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Growth Striations in GaAs as Revealed by DSL Photoetching

Journal Materials Science Forum (Volume 203)
Volume Advances in Crystal Growth
Edited by A.M. Mancini, C. Paorici and M.L. Terranova
Pages 13-18
DOI 10.4028/www.scientific.net/MSF.203.13
Citation E. Gilioli et al., 1996, Materials Science Forum, 203, 13
Authors E. Gilioli, J.L. Weyher, L. Zanotti, C. Mucchino
Keywords Bulk Growth, Chemical Etching, DSL, GaAs, Interface Shape, Striations, Substrate Characterization
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