Buried SiO2 Films: Interfaces and Defects |
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| Journal | Materials Science Forum (Volumes 239 - 241) |
|---|---|
| Volume | Defects in Insulating Materials |
| Edited by | G.E. Matthews and R.T. Williams |
| Pages | 1-6 |
| DOI | 10.4028/www.scientific.net/MSF.239-241.1 |
| Citation | Andre Stesmans, 1996, Materials Science Forum, 239-241, 1 |
| Authors | Andre Stesmans |
| Keywords | Buried Oxide, Electron Spin Resonance, Point Defect, Si on Insulator, Silicon Oxide (SiO) |
| Full Paper | 
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