Paper Title:
In Situ Study of the Accumulation of Ion-Beam-Induced Damage in Single Crystal 3C Silicon Carbide
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 239-241)
Edited by
G.E. Matthews and R.T. Williams
Pages
155-158
DOI
10.4028/www.scientific.net/MSF.239-241.155
Citation
W. J. Weber, N. Yu, "In Situ Study of the Accumulation of Ion-Beam-Induced Damage in Single Crystal 3C Silicon Carbide", Materials Science Forum, Vols. 239-241, pp. 155-158, 1997
Online since
January 1997
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Price
$32.00
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