Theory of Impurity Interactions in Silicon Dioxide |
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| Journal | Materials Science Forum (Volumes 239 - 241) |
|---|---|
| Volume | Defects in Insulating Materials |
| Edited by | G.E. Matthews and R.T. Williams |
| Pages | 33-36 |
| DOI | 10.4028/www.scientific.net/MSF.239-241.33 |
| Citation | W. Beall Fowler et al., 1996, Materials Science Forum, 239-241, 33 |
| Authors | W. Beall Fowler, Arthur H. Edwards |
| Keywords | Defect, Oxidation, Silicon, Silicon Dioxide, Theory |
| Full Paper | 
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