Generation and Annealing Kinetics of Oxygen Vacancy and Oxygen Excess Centers in Thin Film SiO2 |
| Journal |
Materials Science Forum (Volumes 239 - 241) |
| Volume |
Defects in Insulating Materials |
| Edited by |
G.E. Matthews and R.T. Williams |
| Pages |
7-10 |
| DOI |
10.4028/www.scientific.net/MSF.239-241.7 |
| Citation |
Mary Ellen Zvanut et al., 1996, Materials Science Forum, 239-241, 7 |
| Authors |
Mary Ellen Zvanut, T.L. Chen |
| Keywords |
Dry Heat-Treatment, Eδ, EX, Impurity, Point Defect, SiO2/Si |
| Full Paper |
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