Paper Title:
Generation and Annealing Kinetics of Oxygen Vacancy and Oxygen Excess Centers in Thin Film SiO2
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 239-241)
Edited by
G.E. Matthews and R.T. Williams
Pages
7-10
DOI
10.4028/www.scientific.net/MSF.239-241.7
Citation
M. E. Zvanut, T.L. Chen, "Generation and Annealing Kinetics of Oxygen Vacancy and Oxygen Excess Centers in Thin Film SiO2", Materials Science Forum, Vols. 239-241, pp. 7-10, 1997
Online since
January 1997
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Price
$32.00
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