Charge Carrier Lifetime Modificaiton in Silicon by High Energy H+, He+ Ion Implantation |
| Journal |
Materials Science Forum (Volumes 248 - 249) |
| Volume |
Materials Science Applications of Ion Beam Techniques |
| Edited by |
A.G. Balogh and G. Walter |
| Pages |
101-106 |
| DOI |
10.4028/www.scientific.net/MSF.248-249.101 |
| Citation |
N.Q. Khánh et al., 1997, Materials Science Forum, 248-249, 101 |
| Authors |
N.Q. Khánh, P. Tüttö, E.N. Jároli, O. Buiu, L.P. Biró, F. Pászti, T. Mohácsy, C. Kovacsics, A. Manuaba, J. Gyulai |
| Keywords |
Charge Carrier Lifetime, Excess Charge Pocket, Ion-Implantation, Lifetime Tailoring, Microwave Photoconductive Decay (μ-PCD), Radiation Damage, Recombination Activity |
| Full Paper |
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