Paper Title:
Charge Carrier Lifetime Modificaiton in Silicon by High Energy H+, He+ Ion Implantation
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 248-249)
Edited by
A.G. Balogh and G. Walter
Pages
101-106
DOI
10.4028/www.scientific.net/MSF.248-249.101
Citation
N.Q. Khánh, P. Tüttö, E.N. Jároli, O. Buiu, L.P. Biró, F. Pászti, T. Mohácsy, C. Kovacsics, A. Manuaba, J. Gyulai , "Charge Carrier Lifetime Modificaiton in Silicon by High Energy H+, He+ Ion Implantation", Materials Science Forum, Vols. 248-249, pp. 101-106, 1997
Online since
May 1997
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